inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF530FI features low r ds(on) v gs rated at 20v silicon gate for fast switching speed rugged low drive requirements descrition designed especially for high voltage,high speed applications, such as off-line switching power supplies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 100 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 10 a i dm drain current-single plused 40 a p d total dissipation @t c =25 40 w t j max. operating junction temperature -55~175 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.9 /w r th j-a thermal resistance,junction to ambient 80 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF530FI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 100 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 8a 0.16 i gss gate-body leakage current v gs = 20v;v ds = 0 500 na i dss zero gate voltage drain current v ds = 100v; v gs =0 250 ua v sd forward on-voltage i s = 10a; v gs =0 2.5 v pdf pdffactory pro www.fineprint.cn
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